Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

Low power 50 Gb/s silicon traveling wave Mach-Zehnder modulator near 1300 nm

Optics Express

10.1364/OE.21.030350

gold

http://www.opticsinfobase.org/abstract.cfm?URI=oe-21-25-30350

Matthew Streshinsky, Ran Ding, Yang Liu, Ari Novack, Yisu Yang, Yangjin Ma, Xiaoguang Tu, Edward Koh Sing Chee, Andy Eu-Jin Lim, Patrick Guo-Qiang Lo, Tom Baehr-Jones, Michael Hochberg

03 December 2013

Germanium-on-silicon photodetectors have been heavily investigated in recent years as a key component of CMOS-compatible integrated photonics platforms. It has previously been shown that detector bandwidths could theoretically be greatly increased with the incorporation of a carefully chosen inductor and capacitor in the photodetector circuit. Here, we show the experimental results of such a circuit that doubles the detector 3dB bandwidth to 60 GHz. These results suggest that gain peaking is a generally applicable tool for increasing detector bandwidth in practical photonics systems without requiring the difficult process of lowering detector capacitance. © 2013 Optical Society of America

PublisherCopyrights

https://astaroar.ripplewerkz.co/communities-collections/articles/11732

1094-4087

Institute of Microelectronics