Chen, B.J.; Han, G.C., "Micro-magnetic simulations on the switching of EF-controlled MTJ free layer magnetization assisted by oersted-field," in Magnetics Symposium 2014 - Celebrating 50th Anniversary of IEEE Magnetics Society (MSSC50) , vol., no., pp.1-2, 22-23 Sept. 2014 doi: 10.1109/MSSC.2014.6947691
Abstract:
We investigate the switching of electric-field (EF)-controlled magnetic tunneling junction (MTJ)
free layer (FL) magnetization assisted by Oersted fields using micromagnetic simulations. The effects of
several physical parameters, such as damping constant, magnetic anisotropy, as well as the EF efficiency
and the applied Oersted fields on the switching of the free layer magnetization are examined. The results
show that a successful and reliable magnetization switching depends on various parameters, such as the
damping constant, the EF efficiency and the applied Oersted field, etc. It is found that the switching time is
mainly determined by the time taken by the easy axis of the free layer to turn into in-plane due to the
demagnetization field created after applying EF.