| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 6 May 2026 | SERC | Institute of Microelectronics | 0.15-µm InAlN/GaN HEMTs on Si for Simultaneous High Power and Low Noise Application in mm-Wave (Pending publish) | Geok Ing Ng, Yihao Zhuang, Qingyun Xie, Siyu Liu, Marianne Germain, Stefan Degroote, Qiwen Kong, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong | 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM) |