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Publication date Communities Collections Article title Author(s) Journal/Conference
6 May 2026 SERC Institute of Microelectronics 0.15-µm InAlN/GaN HEMTs on Si for Simultaneous High Power and Low Noise Application in mm-Wave (Pending publish) Geok Ing Ng, Yihao Zhuang, Qingyun Xie, Siyu Liu, Marianne Germain, Stefan Degroote, Qiwen Kong, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
24 Dec 2024 SERC Institute of Microelectronics Multi-channel AlN/GaN Schottky barrier diodes (Pending publish) Hanchao Li, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, Siewchuen Foo, Subramaniam Arulkumaran, Chee Lip Gan, Geok Ing Ng Applied Physics Express
16 Oct 2014 SERC Data Storage Institute Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition Ji Rong, Subramaniam Arulkumaran, Geok Ing Ng, Li Yang, Zhi Hong Liu, Kian Siong Ang, Gang Ye, Hong Wang, Serene Lay Geok Ng Applied Physics Letters