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6 May 2026 SERC Institute of Microelectronics 0.15-µm InAlN/GaN HEMTs on Si for Simultaneous High Power and Low Noise Application in mm-Wave (Pending publish) Geok Ing Ng, Yihao Zhuang, Qingyun Xie, Siyu Liu, Marianne Germain, Stefan Degroote, Qiwen Kong, Xiaolin Wang, Bich-Yen Nguyen, Xiao Gong 2026 10th IEEE Electron Devices Technology & Manufacturing Conference (EDTM)
24 Dec 2024 SERC Institute of Microelectronics Multi-channel AlN/GaN Schottky barrier diodes (Pending publish) Hanchao Li, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, Siewchuen Foo, Subramaniam Arulkumaran, Chee Lip Gan, Geok Ing Ng Applied Physics Express
21 Feb 2017 SERC Institute of Microelectronics Effectiveness of oxide trench array as a passive temperature compensation structure in AlN-on-silicon micromechanical resonators Andrew Randles, Pushpapraj Singh, Qingyun Xie, Nan Wang, Chengliang Sun, Xiaolin Zhang, Yuandong Gu Applied Physics Letters