| Publication date | Communities | Collections | Article title | Author(s) | Journal/Conference |
|---|---|---|---|---|---|
| 24 Dec 2024 | SERC | Institute of Microelectronics | Multi-channel AlN/GaN Schottky barrier diodes (Pending publish) | Hanchao Li, Yue Wang, Qingyun Xie, Hanlin Xie, Hui Teng Tan, Pradip Dalapati, Siyu Liu, Kumud Ranjan, Siewchuen Foo, Subramaniam Arulkumaran, Chee Lip Gan, Geok Ing Ng | Applied Physics Express |
| 16 Oct 2014 | SERC | Data Storage Institute | Influence of post-deposition annealing on interfacial properties between GaN and ZrO2 grown by atomic layer deposition | Ji Rong, Subramaniam Arulkumaran, Geok Ing Ng, Li Yang, Zhi Hong Liu, Kian Siong Ang, Gang Ye, Hong Wang, Serene Lay Geok Ng | Applied Physics Letters |