Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device

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Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device
Title:
Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device
Journal Title:
IEEE Transactions on Components, Packaging and Manufacturing Technology
OA Status:
Keywords:
Publication Date:
16 April 2014
Citation:
Yong Han; Boon Long Lau; Xiaowu Zhang; Yoke Choy Leong; Kok Fah Choo, "Enhancement of Hotspot Cooling With Diamond Heat Spreader on Cu Microchannel Heat Sink for GaN-on-Si Device," Components, Packaging and Manufacturing Technology, IEEE Transactions on , vol.4, no.6, pp.983,990, June 2014 doi: 10.1109/TCPMT.2014.2315234
Abstract:
The diamond heat spreader has been directly attached between the test chip and the Cu microchannel heat sink for thermal performance enhancement of the GaN-on-Si device. In the fabricated test vehicle, the small heater is used to represent one unit of transistor. Experimental tests have been conducted on the fabricated test vehicle to investigate the performance. Two types of simulation models have been constructed in COMSOL, considering the multiphysics features and temperature-dependent material properties. The submodel in conjunction with the main model is constructed to predict the thermal performance of the GaN-on-Si structure. The heating power, which is concentrated on eight tiny heaters of size 350×150 μm2, is varied from 10 to 50 W. With the diamond heat spreader attached to the liquidcooled microchannel heat sink, the maximum heater temperature can be reduced by 11.5%–22.9%, while the maximum gate temperature can be reduced by 8.9%–18.5%. Consistent results from the experimental and simulation studies have verified the enhancement of the hotspot cooling capability using directly attached diamond heat spreader.
License type:
PublisherCopyrights
Funding Info:
Description:
ISSN:
2156-3950
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