Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier

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Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier
Title:
Modification of Vapor Phase Concentrations in MoS2 Growth Using a NiO Foam Barrier
Journal Title:
ACS Nano
OA Status:
closed
Publication Date:
16 January 2018
Citation:
ACS Nano 2018, 12, 2, 1339–1349
Abstract:
Single-layer molybdenum disulfide (MoS2) has attracted significant attention due to its electronic and physical properties with much effort invested towards obtaining large area high quality monolayer MoS2 films. In this work, we demonstrate a reactive barrier-based approach to achieve growth of highly homogeneous single layer MoS2 on sapphire through the use of a nickel oxide foam barrier during chemical vapor deposition. Due to the reactivity of the NiO barrier with MoO3, the concentration of precursors reaching the substrate and thus nucleation density is effectively reduced, allowing grain sizes of up to 170 µm and continuous monolayers on the centimeter length scale being obtained. The quality of the monolayer is further revealed by angle-resolved photoemission spectroscopy measurement through observation of a very well-resolved electronic band structure and spin orbit splitting of the bands at room temperature with only two major domain orientations, indicating the successful growth of a highly crystalline and well-oriented MoS2 monolayer.
License type:
PublisherCopyrights
Funding Info:
SERC Grant No 152-70-00012 from Agency of Science, Technology and Research (A*STAR).
Description:
This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Nano, copyright © American Chemical Society after peer review and technical editing by the publisher.To access the final edited and published work see: https://doi.org/10.1021/acsnano.7b07682
ISSN:
1936-0851
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